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| 699440 High Voltage Power Darlington Transistor 699440 High Voltage Power Darlington Transistor Features * Built-in Resistor at Base-Emitter: R1(Typ.) = 2000 * Built-in Resistor at Base: RB(Typ.) = 700100 Equivalent Circuit C B RB 1 1.Base TO-220 2.Collector 3.Emitter R1 R 1 2000 R B 700 E Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature Value 600 275 10 4 6 0.5 40 150 -55 ~ 150 Units V V V A A A W C C * Pulse Test: PW = 300s, Duty Cycle = 2% Pulsed Electrical Characteristics Symbol BVCBO BVCER BVCEO(sus) BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob TC = 25C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capatitance Conditions IC = 500A, IE = 0 IC = 1mA, RBE = 330 IC = 1.5A, IB = 50mA, L = 25mH IE = 500A, IC = 0 VCB = 600V, IE = 0 VEB = 10V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A IC = 3A, IB = 20mA IC = 2A, IB = 5mA VE = 10V, IE = 0, f = 1MHz Min. 600 600 275 10 Typ. Max Units V V V V 0.1 0.1 1000 1000 5000 1.5 6.0 110 mA mA V V pF (c)2004 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com 699440 Rev. A 699440 High Voltage Power Darlington Transistor Typical Performance Characteristics Figure 1. Static Characterstic 5 10k Figure 2. DC Current Gain Ta = 75 C Ta = 125 C o o IB = 1.4mA IC [A], COLLECTOR CURRENT 4 DC CURRENT GAIN 1k 3 Ta = 25 C Ta = - 25 C o o IB = 0.6mA 2 IB = 0.4mA 100 1 IB = 0 0 0 1 2 3 4 5 6 7 10 0.1 VCE = 5V 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 100 Figure 4. Base-Emitter Saturation Voltage 100 VCE(sat) [V], SATURATION VOLTAGE IC = 400 IB IC = 400 IB Ta = 125 C 10 o VBE(sat), SATURATION VOLTAGE 10 Ta = 75 C o Ta = 125 C Ta = 75 C 1 o o 1 Ta = 25 C Ta = - 25 C o o Ta = 25 C Ta = - 25 C o o 0.1 0.1 1 10 0.1 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. RB, & R1 vs. Ambient Temperature 10k Figure 6. Output Capacitance 1000 f = 1MHz, IE = 0 R1 1k Cob [pF], OUPUT CAPACITANCE 150 RB & R1 [], RESISTANCE 100 RB 100 -50 -25 0 o 25 50 75 100 125 10 1 10 100 TA [ C], AMBIENT TEMPERATURE VCB [V], COLLECTOR-BASE VOLTAGE 2 699440 Rev. A www.fairchildsemi.com 699440 High Voltage Power Darlington Transistor Typical Performance Characteristics (Continued) Figure 6. Power Derating 50 PC [W], COLLECTOR POWER DISSIPATION 45 40 35 30 25 20 15 10 5 0 0 25 50 o 75 100 125 150 175 TC [ C], CASE TEMPERATURE 3 699440 Rev. A www.fairchildsemi.com 699440 High Voltage Power Darlington Transistor Mechanical Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters 4 699440 Rev. A www.fairchildsemi.com 699440 High Voltage Power Darlington Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I14 5 699440 Rev. A www.fairchildsemi.com |
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